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MOSFETs SIA519EDJ-T1-GE3
Vishay
SIA519EDJ-T1-GE3
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| HTS | 8541.29.00.95 |
| PPAP | No |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 6 |
| Automotive | No |
| PCB changed | 6 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | N|P |
| Configuration | Dual |
| Package Width | 2.05 |
| Package Height | 0.75(Max) |
| Package Length | 2.05 |
| Product Category | Power MOSFET |
| Supplier Package | PowerPAK SC-70 EP |
| Maximum IDSS (uA) | 1 |
| Process Technology | TrenchFET |
| Typical Fall Time (ns) | 16@N Channel|10@P Channel |
| Typical Rise Time (ns) | 12@N Channel|20@P Channel |
| Number of Elements per Chip | 2 |
| Maximum Gate Resistance (Ohm) | 20@P Channel|7@N Channel |
| Minimum Gate Resistance (Ohm) | 0.2@P Channel|0.7@N Channel |
| Maximum Power Dissipation (mW) | 1900 |
| Typical Gate Charge @ 10V (nC) | 10.5@P Channel|7.7@N Channel |
| Typical Gate Charge @ Vgs (nC) | 7.7@10V|3.7@4.5V@N Channel|10.5@10V|5.3@4.5V@P Channel |
| Maximum Gate Source Voltage (V) | ±12 |
| Typical Output Capacitance (pF) | 82@N Channel|105@P Channel |
| Typical Turn-On Delay Time (ns) | 20@P Channel|10@N Channel |
| Maximum Drain Source Voltage (V) | 20 |
| Typical Gate Plateau Voltage (V) | 1.75@P Channel|1.95@N Channel |
| Typical Turn-Off Delay Time (ns) | 21@N Channel|25@P Channel |
| Maximum Diode Forward Voltage (V) | 1.2 |
| Typical Diode Forward Voltage (V) | 0.8 |
| Typical Gate to Drain Charge (nC) | 0.95@N Channel|2@P Channel |
| Maximum Gate Threshold Voltage (V) | 1.4@N Channel|1.3@P Channel |
| Minimum Gate Threshold Voltage (V) | 0.5@P Channel|0.6@N Channel |
| Typical Gate to Source Charge (nC) | 0.75@P Channel|0.85@N Channel |
| Typical Reverse Recovery Time (ns) | 26@P Channel|15@N Channel |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 4.5@N Channel|3.7@P Channel |
| Operating Junction Temperature (°C) | -55 to 150 |
| Typical Input Capacitance @ Vds (pF) | 350@10V@N Channel|340@10V@P Channel |
| Typical Reverse Recovery Charge (nC) | 8@N Channel|13@P Channel |
| Maximum Drain Source Resistance (MOhm) | 90@4.5V@P Channel|40@4.5V@N Channel |
| Maximum Gate Source Leakage Current (nA) | 90000@N Channel|8000@P Channel |
| Maximum Positive Gate Source Voltage (V) | 12 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 15 |
| Maximum Power Dissipation on PCB @ TC=25°C (W) | 1.9 |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 95@10V@P Channel|50@10V@N Channel |
| Maximum Continuous Drain Current on PCB @ TC=25°C (A) | 3.7@P Channel|4.5@N Channel |
| Maximum Junction Ambient Thermal Resistance on PCB (°C/W) | 65 |
| Description |
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