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IRFB7730PBF
IRFB7730PBF
MOSFETs IRFB7730PBF
Infineon
IRFB7730PBF
--
Diodes, Transistors and Thyristors
MOSFETs
IRFB7730PBF.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
EU RoHSCompliant with Exemption
MaterialSi
MountingThrough Hole
ECCN (US)EAR99
PackagingTube
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width4.83(Max)
Package Height9.02(Max)
Package Length10.67(Max)
Product CategoryPower MOSFET
Supplier PackageTO-220AB
Maximum IDSS (uA)1
Process TechnologyHEXFET
Standard Package NameTO-220
Typical Fall Time (ns)115
Typical Rise Time (ns)120
Number of Elements per Chip1
Maximum Power Dissipation (mW)375000
Typical Gate Charge @ 10V (nC)271
Typical Gate Charge @ Vgs (nC)271@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)21
Maximum Drain Source Voltage (V)75
Typical Turn-Off Delay Time (ns)180
Maximum Gate Threshold Voltage (V)3.7
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)246
Typical Input Capacitance @ Vds (pF)13660@25V
Maximum Drain Source Resistance (MOhm)2.6@10V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH Si 75V 246A 3-Pin(3+Tab) TO-220AB Tube
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