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IRFE120
IRFE120
MOSFETs IRFE120
Infineon
IRFE120
--
Diodes, Transistors and Thyristors
MOSFETs
IRFE120.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSNot Compliant
MountingSurface Mount
ECCN (US)EAR99
Pin Count18
AutomotiveNo
Lead ShapeNo Lead
PCB changed18
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Hex Drain Octal Source Dual Gate
Package Width7.49(Max)
Package Height3.22(Max)
Package Length9.14(Max)
Product CategoryPower MOSFET
Supplier PackageLLCC
Process TechnologyHEXFET
Standard Package NameLLCC
Typical Fall Time (ns)70(Max)
Typical Rise Time (ns)70(Max)
Number of Elements per Chip1
Maximum Power Dissipation (mW)14000
Typical Gate Charge @ 10V (nC)17(Max)
Typical Gate Charge @ Vgs (nC)17(Max)@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)40(Max)
Maximum Drain Source Voltage (V)100
Typical Turn-Off Delay Time (ns)40(Max)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)4.5
Typical Input Capacitance @ Vds (pF)350@25V
Maximum Drain Source Resistance (mOhm)350@10V
Description
Trans MOSFET N-CH 100V 4.5A 18-Pin LLCC
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