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IRFG110
IRFG110
MOSFETs IRFG110
Infineon
IRFG110
--
Diodes, Transistors and Thyristors
MOSFETs
IRFG110.pdf
Specification
Product AttributeAttribute Value
HTS8542.31.00.01
PPAPNo
SVHCYes
EU RoHSNot Compliant
MountingThrough Hole
ECCN (US)EAR99
Pin Count14
AutomotiveNo
PCB changed14
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationQuad
Package Width7.74(Max)
Package Height3.3(Max)
Package Length19.3(Max)
Product CategoryPower MOSFET
Supplier PackageMO-036AB
Standard Package NameMO-036AB
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)40(Max)
Typical Rise Time (ns)25(Max)
Number of Elements per Chip4
Maximum Power Dissipation (mW)1400
Typical Gate Charge @ 10V (nC)15(Max)
Typical Gate Charge @ Vgs (nC)15(Max)@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)20(Max)
Maximum Drain Source Voltage (V)100
Typical Turn-Off Delay Time (ns)40(Max)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)1
Typical Input Capacitance @ Vds (pF)180@25V
Maximum Drain Source Resistance (MOhm)800@10V
Description
Trans MOSFET N-CH 100V 1A 14-Pin MO-036AB
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