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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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IRFH6200TRPBF
IRFH6200TRPBF
MOSFETs IRFH6200TRPBF
Infineon
IRFH6200TRPBF
--
Diodes, Transistors and Thyristors
MOSFETs
IRFH6200TRPBF.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveNo
Lead ShapeNo Lead
PCB changed8
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Quad Drain Triple Source
Package Width6
Package Height0.81
Package Length5
Product CategoryPower MOSFET
Supplier PackagePQFN EP
Process TechnologyHEXFET
Standard Package NameQFN
Typical Fall Time (ns)160
Typical Rise Time (ns)74
Number of Elements per Chip1
Maximum Power Dissipation (mW)3600
Typical Gate Charge @ Vgs (nC)155@4.5V
Maximum Gate Source Voltage (V)±12
Typical Turn-On Delay Time (ns)14
Maximum Drain Source Voltage (V)20
Typical Turn-Off Delay Time (ns)140
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)49
Typical Input Capacitance @ Vds (pF)10890@10V
Maximum Drain Source Resistance (MOhm)0.95@10V
Description
Trans MOSFET N-CH 20V 49A 8-Pin PQFN EP T/R
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