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IRFHM3911TRPBF
IRFHM3911TRPBF
MOSFETs IRFHM3911TRPBF
Infineon
IRFHM3911TRPBF
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveNo
PCB changed8
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Quad Drain Triple Source
Package Width3.2(Max)
Package Height1.05(Max)
Package Length3.2(Max)
Product CategoryPower MOSFET
Supplier PackagePQFN EP
Maximum IDSS (uA)20
Process TechnologyHEXFET
Standard Package NameQFN
Typical Fall Time (ns)5.1
Typical Rise Time (ns)5.8
Number of Elements per Chip1
Maximum Power Dissipation (mW)2800
Typical Gate Charge @ 10V (nC)17
Typical Gate Charge @ Vgs (nC)17@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)5
Maximum Drain Source Voltage (V)100
Typical Turn-Off Delay Time (ns)16
Maximum Gate Threshold Voltage (V)4
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)3.2
Typical Input Capacitance @ Vds (pF)760@50V
Maximum Drain Source Resistance (mOhm)115@10V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH 100V 3.2A 8-Pin PQFN EP T/R
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