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IRFL024NPBF
IRFL024NPBF
MOSFETs IRFL024NPBF
Infineon
IRFL024NPBF
--
Diodes, Transistors and Thyristors
MOSFETs
IRFL024NPBF.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTube
Pin Count4
AutomotiveNo
Lead ShapeGull-wing
PCB changed3
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Dual Drain
Package Width3.7(Max)
Package Height1.8(Max) - 0.06
Package Length6.7(Max)
Product CategoryPower MOSFET
Supplier PackageSOT-223
Process TechnologyHEXFET
Standard Package NameSOT
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)17.7
Typical Rise Time (ns)13.4
Number of Elements per Chip1
Maximum Power Dissipation (mW)2100
Typical Gate Charge @ 10V (nC)18.3(Max)
Typical Gate Charge @ Vgs (nC)18.3(Max)@10V
Maximum Gate Source Voltage (V)±20
Typical Output Capacitance (pF)145
Typical Turn-On Delay Time (ns)8.1
Maximum Drain Source Voltage (V)55
Typical Turn-Off Delay Time (ns)22.2
Typical Gate to Drain Charge (nC)7.7(Max)
Maximum Gate Threshold Voltage (V)4
Typical Gate to Source Charge (nC)3(Max)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)4
Typical Input Capacitance @ Vds (pF)400@25V
Typical Reverse Recovery Charge (nC)50
Maximum Drain Source Resistance (mOhm)75@10V
Description
Trans MOSFET N-CH Si 55V 4A 4-Pin(3+Tab) SOT-223 Tube
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