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IRFNG50
IRFNG50
MOSFETs IRFNG50
Infineon
IRFNG50
--
Diodes, Transistors and Thyristors
MOSFETs
IRFNG50.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSNot Compliant
MountingSurface Mount
ECCN (US)EAR99
Pin Count3
AutomotiveNo
PCB changed3
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width16(Max)
Package Height3.58(Max)
Package Length11.55(Max)
Product CategoryPower MOSFET
Supplier PackageSMD-1
Standard Package NameSMD
Typical Fall Time (ns)60(Max)
Typical Rise Time (ns)44(Max)
Number of Elements per Chip1
Maximum Power Dissipation (mW)150000
Typical Gate Charge @ 10V (nC)200(Max)
Typical Gate Charge @ Vgs (nC)200(Max)@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)30(Max)
Maximum Drain Source Voltage (V)1000
Typical Turn-Off Delay Time (ns)210(Max)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)5.5
Typical Input Capacitance @ Vds (pF)2400@25V
Maximum Drain Source Resistance (mOhm)2250@10V
Description
Trans MOSFET N-CH 1KV 5.5A 3-Pin SMD-1
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