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MOSFETs DMC6070LFDH-7
Diodes Incorporated
DMC6070LFDH-7
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Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| PPAP | No |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 8 |
| Automotive | No |
| PCB changed | 8 |
| Part Status | Obsolete |
| Channel Mode | Enhancement |
| Channel Type | N|P |
| Configuration | Dual Dual Drain |
| Package Width | 3 |
| Package Height | 0.78 |
| Package Length | 3 |
| Product Category | Power MOSFET |
| Supplier Package | VDFN EP |
| Maximum IDSS (uA) | 1 |
| Standard Package Name | DFN |
| Typical Fall Time (ns) | 21|37.8 |
| Typical Rise Time (ns) | 11|11.6 |
| Number of Elements per Chip | 2 |
| Maximum Power Dissipation (mW) | 1400 |
| Typical Gate Charge @ 10V (nC) | 11.5@N Channel|8.9@P Channel |
| Typical Gate Charge @ Vgs (nC) | 11.5@10V|5.2@4.5V@N Channel|8.9@10V|4.3@4.5V@P Channel |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Turn-On Delay Time (ns) | 9.6|7.6 |
| Maximum Drain Source Voltage (V) | 60 |
| Typical Turn-Off Delay Time (ns) | 61|79.8 |
| Maximum Gate Threshold Voltage (V) | 3 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 3.1@N Channel|2.4@P Channel |
| Typical Input Capacitance @ Vds (pF) | 731@20V@N Channel|612@20V@P Channel |
| Maximum Drain Source Resistance (MOhm) | 85@10V@N Channel|150@10V@P Channel |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Description |
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