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IRFP460PBF
IRFP460PBF
MOSFETs IRFP460PBF
Vishay
IRFP460PBF
--
Diodes, Transistors and Thyristors
MOSFETs
IRFP460PBF.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingThrough Hole
ECCN (US)EAR99
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusNRND
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width5.21(Max)
Package Height20.7(Max)
Package Length15.87(Max)
Product CategoryPower MOSFET
Supplier PackageTO-247AC
Maximum IDSS (uA)25
Standard Package NameTO-247
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)58
Typical Rise Time (ns)59
Number of Elements per Chip1
Maximum Power Dissipation (mW)280000
Typical Gate Charge @ 10V (nC)210(Max)
Typical Gate Charge @ Vgs (nC)210(Max)@10V
Maximum Gate Source Voltage (V)±20
Typical Output Capacitance (pF)870
Typical Turn-On Delay Time (ns)18
Maximum Drain Source Voltage (V)500
Typical Gate Plateau Voltage (V)5.8
Typical Turn-Off Delay Time (ns)110
Maximum Diode Forward Voltage (V)1.8
Typical Gate to Drain Charge (nC)110(Max)
Maximum Gate Threshold Voltage (V)4
Minimum Gate Threshold Voltage (V)2
Typical Gate to Source Charge (nC)29(Max)
Typical Reverse Recovery Time (ns)570
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)20
Operating Junction Temperature (°C)-55 to 150
Typical Input Capacitance @ Vds (pF)4200@25V
Typical Reverse Recovery Charge (nC)5700
Maximum Drain Source Resistance (mOhm)270@10V
Maximum Gate Source Leakage Current (nA)100
Maximum Positive Gate Source Voltage (V)20
Maximum Pulsed Drain Current @ TC=25°C (A)80
Typical Reverse Transfer Capacitance @ Vds (pF)350@25V
Description
Trans MOSFET N-CH 500V 20A 3-Pin(3+Tab) TO-247AC
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