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IRFR024PBF
IRFR024PBF
MOSFETs IRFR024PBF
Vishay
IRFR024PBF
--
Diodes, Transistors and Thyristors
MOSFETs
IRFR024PBF.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed2
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width6.22(Max)
Package Height2.38(Max)
Package Length6.73(Max)
Product CategoryPower MOSFET
Supplier PackageDPAK
Maximum IDSS (uA)25
Process TechnologyHEXFET
Standard Package NameTO-252
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)42
Typical Rise Time (ns)58
Number of Elements per Chip1
Maximum Power Dissipation (mW)2500
Typical Gate Charge @ 10V (nC)25(Max)
Typical Gate Charge @ Vgs (nC)25(Max)@10V
Maximum Gate Source Voltage (V)±20
Typical Output Capacitance (pF)360
Typical Turn-On Delay Time (ns)13
Maximum Drain Source Voltage (V)60
Typical Gate Plateau Voltage (V)6.1
Typical Turn-Off Delay Time (ns)25
Maximum Diode Forward Voltage (V)1.5
Typical Gate to Drain Charge (nC)11(Max)
Maximum Gate Threshold Voltage (V)4
Minimum Gate Threshold Voltage (V)2
Typical Gate to Source Charge (nC)5.8(Max)
Typical Reverse Recovery Time (ns)88
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)14
Operating Junction Temperature (°C)-55 to 150
Typical Input Capacitance @ Vds (pF)640@25V
Typical Reverse Recovery Charge (nC)290
Maximum Drain Source Resistance (mOhm)100@10V
Maximum Gate Source Leakage Current (nA)100
Maximum Positive Gate Source Voltage (V)20
Maximum Pulsed Drain Current @ TC=25°C (A)56
Maximum Power Dissipation on PCB @ TC=25°C (W)2.5
Typical Reverse Transfer Capacitance @ Vds (pF)79@25V
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)50
Description
Trans MOSFET N-CH 60V 14A 3-Pin(2+Tab) DPAK
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