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IRFR120NTRR
IRFR120NTRR
MOSFETs IRFR120NTRR
Infineon
IRFR120NTRR
--
Diodes, Transistors and Thyristors
MOSFETs
IRFR120NTRR.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
EU RoHSNot Compliant
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed2
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width6.22(Max)
Package Height2.39(Max)
Package Length6.73(Max)
Product CategoryPower MOSFET
Supplier PackageDPAK
Process TechnologyHEXFET
Standard Package NameTO-252
Typical Fall Time (ns)23
Typical Rise Time (ns)23
Number of Elements per Chip1
Maximum Power Dissipation (mW)48000
Typical Gate Charge @ 10V (nC)25(Max)
Typical Gate Charge @ Vgs (nC)25(Max)@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)4.5
Maximum Drain Source Voltage (V)100
Typical Turn-Off Delay Time (ns)32
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)9.4
Typical Input Capacitance @ Vds (pF)330@25V
Maximum Drain Source Resistance (MOhm)210@10V
Description
Trans MOSFET N-CH Si 100V 9.4A 3-Pin(2+Tab) DPAK T/R
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