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IRFR9120N
IRFR9120N
MOSFETs IRFR9120N
Infineon
IRFR9120N
--
Diodes, Transistors and Thyristors
MOSFETs
IRFR9120N.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
EU RoHSNot Compliant
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed2
Part StatusObsolete
Channel ModeEnhancement
Channel TypeP
ConfigurationSingle
Package Width6.22(Max)
Package Height2.39(Max)
Package Length6.73(Max)
Product CategoryPower MOSFET
Supplier PackageDPAK
Process TechnologyHEXFET
Standard Package NameTO-252
Typical Fall Time (ns)31
Typical Rise Time (ns)47
Number of Elements per Chip1
Maximum Power Dissipation (mW)40000
Typical Gate Charge @ 10V (nC)27(Max)
Typical Gate Charge @ Vgs (nC)27(Max)@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)14
Maximum Drain Source Voltage (V)100
Typical Turn-Off Delay Time (ns)28
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)6.6
Typical Input Capacitance @ Vds (pF)350@25V
Maximum Drain Source Resistance (mOhm)480@10V
Description
Trans MOSFET P-CH Si 100V 6.6A 3-Pin(2+Tab) DPAK T/R
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