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IRFSL4010PBF
IRFSL4010PBF
MOSFETs IRFSL4010PBF
Infineon
IRFSL4010PBF
--
Diodes, Transistors and Thyristors
MOSFETs
IRFSL4010PBF.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
EU RoHSCompliant with Exemption
MountingThrough Hole
ECCN (US)EAR99
PackagingTube
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width4.83(Max)
Package Height9.65(Max)
Package Length10.67(Max)
Product CategoryPower MOSFET
Supplier PackageTO-262
Process TechnologyHEXFET
Standard Package NameI2PAK
Typical Fall Time (ns)77
Typical Rise Time (ns)86
Number of Elements per Chip1
Maximum Power Dissipation (mW)375000
Typical Gate Charge @ 10V (nC)143
Typical Gate Charge @ Vgs (nC)143@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)21
Maximum Drain Source Voltage (V)100
Typical Turn-Off Delay Time (ns)100
Maximum Gate Threshold Voltage (V)4
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)180
Typical Input Capacitance @ Vds (pF)9575@50V
Maximum Drain Source Resistance (MOhm)4.7@10V
Description
Trans MOSFET N-CH 100V 180A 3-Pin(3+Tab) TO-262 Tube
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