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IRFSL5620PBF
IRFSL5620PBF
MOSFETs IRFSL5620PBF
Infineon
IRFSL5620PBF
--
Diodes, Transistors and Thyristors
MOSFETs
IRFSL5620PBF.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
EU RoHSCompliant with Exemption
MaterialSi
MountingThrough Hole
ECCN (US)EAR99
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width4.83(Max)
Package Height9.65(Max)
Package Length10.67(Max)
Product CategoryPower MOSFET
Supplier PackageTO-262
Standard Package NameI2PAK
Typical Fall Time (ns)9.9
Typical Rise Time (ns)14.6
Number of Elements per Chip1
Maximum Power Dissipation (mW)144000
Typical Gate Charge @ 10V (nC)25
Typical Gate Charge @ Vgs (nC)25@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)8.6
Maximum Drain Source Voltage (V)200
Typical Turn-Off Delay Time (ns)17.1
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)24
Typical Input Capacitance @ Vds (pF)1710@50V
Maximum Drain Source Resistance (MOhm)77.5@10V
Description
Trans MOSFET N-CH Si 200V 24A 3-Pin(3+Tab) TO-262
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