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IRFU3910PBF
IRFU3910PBF
MOSFETs IRFU3910PBF
Infineon
IRFU3910PBF
--
Diodes, Transistors and Thyristors
MOSFETs
IRFU3910PBF.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
EU RoHSCompliant with Exemption
MountingThrough Hole
ECCN (US)EAR99
PackagingTube
Pin Count3
AutomotiveNo
PCB changed3
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width2.39(Max)
Package Height6.22(Max)
Package Length6.73(Max)
Product CategoryPower MOSFET
Supplier PackageIPAK
Process TechnologyHEXFET
Typical Fall Time (ns)25
Typical Rise Time (ns)27
Number of Elements per Chip1
Maximum Power Dissipation (mW)79000
Typical Gate Charge @ 10V (nC)44(Max)
Typical Gate Charge @ Vgs (nC)44(Max)@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)6.4
Maximum Drain Source Voltage (V)100
Typical Turn-Off Delay Time (ns)37
Typical Gate to Drain Charge (nC)14
Maximum Gate Threshold Voltage (V)4
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)16
Typical Input Capacitance @ Vds (pF)640@25V
Maximum Drain Source Resistance (mOhm)115@10V
Description
Trans MOSFET N-CH 100V 16A 3-Pin(3+Tab) IPAK Tube
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