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IRFU7746PBF
IRFU7746PBF
MOSFETs IRFU7746PBF
Infineon
IRFU7746PBF
--
Diodes, Transistors and Thyristors
MOSFETs
IRFU7746PBF.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
TabTab
PPAPNo
EU RoHSCompliant
MaterialSi
MountingThrough Hole
ECCN (US)EAR99
PackagingTube
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width2.39(Max)
Package Height6.22(Max)
Package Length6.73(Max)
Product CategoryPower MOSFET
Supplier PackageIPAK
Maximum IDSS (uA)1
Process TechnologyHEXFET
Standard Package NameTO-251
Typical Fall Time (ns)21
Typical Rise Time (ns)30
Number of Elements per Chip1
Maximum Power Dissipation (mW)99000
Typical Gate Charge @ 10V (nC)59
Typical Gate Charge @ Vgs (nC)59@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)7.9
Maximum Drain Source Voltage (V)75
Typical Turn-Off Delay Time (ns)34
Maximum Gate Threshold Voltage (V)3.7
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)59
Typical Input Capacitance @ Vds (pF)3107@25V
Maximum Drain Source Resistance (mOhm)11.2@10V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH Si 75V 59A 3-Pin(3+Tab) IPAK Tube
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