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IRFZ10
IRFZ10
MOSFETs IRFZ10
Vishay
IRFZ10
--
Diodes, Transistors and Thyristors
MOSFETs
IRFZ10.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
EU RoHSNot Compliant
MountingThrough Hole
ECCN (US)EAR99
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width4.7(Max)
Package Height9.01(Max)
Package Length10.41(Max)
Product CategoryPower MOSFET
Supplier PackageTO-220AB
Standard Package NameTO-220
Typical Fall Time (ns)19
Typical Rise Time (ns)50
Number of Elements per Chip1
Maximum Power Dissipation (mW)43000
Typical Gate Charge @ 10V (nC)11(Max)
Typical Gate Charge @ Vgs (nC)11(Max)@10V
Maximum Gate Source Voltage (V)±20
Typical Output Capacitance (pF)160
Typical Turn-On Delay Time (ns)10
Maximum Drain Source Voltage (V)60
Typical Turn-Off Delay Time (ns)13
Typical Gate to Drain Charge (nC)5.8(Max)
Maximum Gate Threshold Voltage (V)4
Typical Gate to Source Charge (nC)3.1(Max)
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)10
Typical Input Capacitance @ Vds (pF)300@25V
Typical Reverse Recovery Charge (nC)200
Maximum Drain Source Resistance (mOhm)200@10V
Description
Trans MOSFET N-CH 60V 10A 3-Pin(3+Tab) TO-220AB
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