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IRFZ34NSTRL
IRFZ34NSTRL
MOSFETs IRFZ34NSTRL
Infineon
IRFZ34NSTRL
--
Diodes, Transistors and Thyristors
MOSFETs
IRFZ34NSTRL.pdf
Specification
Product AttributeAttribute Value
HTS8542330001
TabTab
PPAPNo
EU RoHSNot Compliant
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed2
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width9.65(Max)
Package Height4.83(Max)
Package Length10.67(Max)
Product CategoryPower MOSFET
Supplier PackageD2PAK
Process TechnologyHEXFET
Standard Package NameTO-263
Typical Fall Time (ns)40
Typical Rise Time (ns)49
Number of Elements per Chip1
Maximum Power Dissipation (mW)3800
Typical Gate Charge @ 10V (nC)34(Max)
Typical Gate Charge @ Vgs (nC)34(Max)@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)7
Maximum Drain Source Voltage (V)55
Typical Turn-Off Delay Time (ns)31
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)29
Typical Input Capacitance @ Vds (pF)700@25V
Maximum Drain Source Resistance (MOhm)40@10V
Description
Trans MOSFET N-CH Si 55V 29A 3-Pin(2+Tab) D2PAK T/R
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