HTS | 8541.29.00.95 |
Tab | Tab |
PPAP | No |
SVHC | Yes |
EU RoHS | Compliant with Exemption |
Material | Si |
Mounting | Surface Mount |
ECCN (US) | EAR99 |
Packaging | Tube |
Pin Count | 3 |
Automotive | No |
Lead Shape | Gull-wing |
PCB changed | 2 |
Part Status | Obsolete |
Channel Mode | Enhancement |
Channel Type | N |
Configuration | Single |
Package Width | 9.65(Max) |
Package Height | 4.83(Max) |
Package Length | 10.67(Max) |
Product Category | Power MOSFET |
Supplier Package | D2PAK |
Maximum IDSS (uA) | 25 |
Process Technology | HEXFET |
Standard Package Name | TO-263 |
SVHC Exceeds Threshold | Yes |
Typical Fall Time (ns) | 70 |
Typical Rise Time (ns) | 60 |
Number of Elements per Chip | 1 |
Maximum Power Dissipation (mW) | 110000 |
Typical Gate Charge @ 10V (nC) | 60(Max) |
Typical Gate Charge @ Vgs (nC) | 60(Max)@10V |
Maximum Gate Source Voltage (V) | ±20 |
Typical Output Capacitance (pF) | 420 |
Typical Turn-On Delay Time (ns) | 12 |
Maximum Drain Source Voltage (V) | 60 |
Typical Gate Plateau Voltage (V) | 5.4 |
Typical Turn-Off Delay Time (ns) | 70 |
Maximum Diode Forward Voltage (V) | 1.3 |
Typical Gate to Drain Charge (nC) | 23(Max) |
Maximum Gate Threshold Voltage (V) | 4 |
Minimum Gate Threshold Voltage (V) | 2 |
Typical Gate to Source Charge (nC) | 13(Max) |
Typical Reverse Recovery Time (ns) | 69 |
Maximum Operating Temperature (°C) | 175 |
Minimum Operating Temperature (°C) | -55 |
Maximum Continuous Drain Current (A) | 48 |
Operating Junction Temperature (°C) | -55 to 175 |
Typical Input Capacitance @ Vds (pF) | 1360@25V |
Typical Reverse Recovery Charge (nC) | 177 |
Maximum Drain Source Resistance (mOhm) | 23@10V |
Maximum Gate Source Leakage Current (nA) | 100 |
Maximum Positive Gate Source Voltage (V) | 20 |
Maximum Pulsed Drain Current @ TC=25°C (A) | 192 |
Typical Reverse Transfer Capacitance @ Vds (pF) | 160@25V |
Description | |