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PMDPB30XNZ
PMDPB30XNZ
MOSFETs PMDPB30XNZ
Nexperia
PMDPB30XNZ
--
Diodes, Transistors and Thyristors
MOSFETs
PMDPB30XNZ.pdf
Specification
Product AttributeAttribute Value
PPAPNo
SVHCYes
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count6
AutomotiveNo
PCB changed6
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationDual
Package Width2.1(Max)
Package Height0.61(Max)
Package Length2.1(Max)
Product CategorySmall Signal
Supplier PackageHUSON EP
Process TechnologyTMOS
Typical Fall Time (ns)16
Typical Rise Time (ns)15
Number of Elements per Chip2
Maximum Power Dissipation (mW)1170
Typical Gate Charge @ 10V (nC)14.4
Typical Gate Charge @ Vgs (nC)14.4@10V
Maximum Gate Source Voltage (V)12
Typical Turn-On Delay Time (ns)4
Maximum Drain Source Voltage (V)20
Typical Turn-Off Delay Time (ns)40
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)4
Typical Input Capacitance @ Vds (pF)660@10V
Maximum Drain Source Resistance (mOhm)40@4.5V
Description
Trans MOSFET N-CH 20V 4A 6-Pin HUSON EP T/R
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