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IRHF9130
IRHF9130
MOSFETs IRHF9130
Infineon
IRHF9130
--
Diodes, Transistors and Thyristors
MOSFETs
IRHF9130.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSNot Compliant
Diameter9.22(Max)
MountingThrough Hole
ECCN (US)Contact Export
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusActive
Channel ModeEnhancement
Channel TypeP
ConfigurationSingle
Package Height4.54(Max)
Product CategoryPower MOSFET
Supplier PackageTO-39
Standard Package NameTO-205-AF
Typical Fall Time (ns)70(Max)
Typical Rise Time (ns)50(Max)
Number of Elements per Chip1
Maximum Power Dissipation (mW)25000
Typical Gate Charge @ Vgs (nC)45(Max)@12V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)30(Max)
Maximum Drain Source Voltage (V)100
Typical Turn-Off Delay Time (ns)70(Max)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)6.5
Typical Input Capacitance @ Vds (pF)1200@25V
Maximum Drain Source Resistance (MOhm)350@12V
Description
Trans MOSFET P-CH 100V 6.5A 3-Pin TO-39
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