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MOSFETs IRHNA93260
Infineon
IRHNA93260
--
Diodes, Transistors and Thyristors
MOSFETs
IRHNA93260.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSNot Compliant
MountingSurface Mount
ECCN (US)EAR99
Pin Count3
AutomotiveNo
PCB changed3
Part StatusActive
Channel ModeEnhancement
Channel TypeP
ConfigurationSingle
Package Width17.65(Max)
Package Height3.07(Max)
Package Length13.46(Max)
Product CategoryPower MOSFET
Supplier PackageSMD-2
Standard Package NameSMD
Typical Fall Time (ns)220(Max)
Typical Rise Time (ns)141(Max)
Number of Elements per Chip1
Maximum Power Dissipation (mW)300000
Typical Gate Charge @ Vgs (nC)300(Max)@12V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)37(Max)
Maximum Drain Source Voltage (V)200
Typical Turn-Off Delay Time (ns)148(Max)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)29
Typical Input Capacitance @ Vds (pF)6143@25V
Maximum Drain Source Resistance (MOhm)159@12V
Description
Trans MOSFET P-CH 200V 29A 3-Pin SMD-2
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