Product Attribute | Attribute Value |
PPAP | No |
EU RoHS | Not Compliant |
Mounting | Surface Mount |
ECCN (US) | Contact Export |
Pin Count | 28 |
Automotive | No |
Lead Shape | No Lead |
PCB changed | 28 |
Part Status | Active |
Channel Mode | Enhancement |
Channel Type | N|P |
Configuration | Quad Dual Drain Dual Source |
Package Width | 11.68(Max) |
Package Height | 2.41(Max) |
Package Length | 11.68(Max) |
Product Category | Power MOSFET |
Supplier Package | LCC |
Process Technology | R5 |
Standard Package Name | LCC |
Typical Fall Time (ns) | 90(Max) |
Typical Rise Time (ns) | 24(Max) |
Number of Elements per Chip | 4 |
Maximum Power Dissipation (mW) | 12000 |
Typical Gate Charge @ Vgs (nC) | 13(Max)@12V@N Channel|11(Max)@12V@P Channel |
Maximum Gate Source Voltage (V) | ±20 |
Typical Turn-On Delay Time (ns) | 20(Max) |
Maximum Drain Source Voltage (V) | 100 |
Typical Turn-Off Delay Time (ns) | 32(Max) |
Maximum Operating Temperature (°C) | 150 |
Minimum Operating Temperature (°C) | -55 |
Maximum Continuous Drain Current (A) | 4.6@N Channel|2.8@ P Channel |
Typical Input Capacitance @ Vds (pF) | 371@25V@N Channel|377@25V@P Channel |
Maximum Drain Source Resistance (MOhm) | 270@12V@N Channel|1200@12V@P Channel |
Description |