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IRHY57130CM
IRHY57130CM
MOSFETs IRHY57130CM
Infineon
IRHY57130CM
--
Diodes, Transistors and Thyristors
MOSFETs
IRHY57130CM.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
EU RoHSNot Compliant
MountingThrough Hole
ECCN (US)Contact Export
Pin Count3
AutomotiveNo
PCB changed3
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width5.08(Max)
Package Height10.92(Max)
Package Length10.66(Max)
Product CategoryPower MOSFET
Supplier PackageTO-257AA
Process TechnologyR5
Typical Fall Time (ns)30(Max)
Typical Rise Time (ns)100(Max)
Number of Elements per Chip1
Maximum Power Dissipation (mW)75000
Typical Gate Charge @ Vgs (nC)50(Max)@12V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)25(Max)
Maximum Drain Source Voltage (V)100
Typical Turn-Off Delay Time (ns)35(Max)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)18
Typical Input Capacitance @ Vds (pF)1005@25V
Maximum Drain Source Resistance (MOhm)70@12V
Description
Trans MOSFET N-CH 100V 18A 3-Pin(3+Tab) TO-257AA
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