Product Attribute | Attribute Value |
PPAP | No |
EU RoHS | Compliant |
ECCN (US) | EAR99 |
Automotive | No |
Channel Mode | Enhancement |
Channel Type | N |
Configuration | Single Quad Drain Triple Source |
Product Category | Power MOSFET |
Process Technology | TrenchFET Gen V |
Typical Fall Time (ns) | 9 |
Typical Rise Time (ns) | 6|8 |
Number of Elements per Chip | 1 |
Maximum Power Dissipation (mW) | 5200 |
Typical Gate Charge @ 10V (nC) | 12.8 |
Typical Gate Charge @ Vgs (nC) | 12.8@10V|9.7@7.5V |
Maximum Gate Source Voltage (V) | ±20 |
Typical Turn-On Delay Time (ns) | 13|12 |
Maximum Drain Source Voltage (V) | 150 |
Typical Turn-Off Delay Time (ns) | 16|15 |
Maximum Operating Temperature (°C) | 150 |
Minimum Operating Temperature (°C) | -55 |
Maximum Continuous Drain Current (A) | 9.5 |
Operating Junction Temperature (°C) | -55 to 150 |
Typical Input Capacitance @ Vds (pF) | 975@75V |
Maximum Drain Source Resistance (mOhm) | 23@10V |
Description |