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SIR5708DP-T1-RE3
SIR5708DP-T1-RE3
MOSFETs SIR5708DP-T1-RE3
Vishay
SIR5708DP-T1-RE3
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
ECCN (US)EAR99
AutomotiveNo
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Quad Drain Triple Source
Product CategoryPower MOSFET
Process TechnologyTrenchFET Gen V
Typical Fall Time (ns)9
Typical Rise Time (ns)6|8
Number of Elements per Chip1
Maximum Power Dissipation (mW)5200
Typical Gate Charge @ 10V (nC)12.8
Typical Gate Charge @ Vgs (nC)12.8@10V|9.7@7.5V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)13|12
Maximum Drain Source Voltage (V)150
Typical Turn-Off Delay Time (ns)16|15
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)9.5
Operating Junction Temperature (°C)-55 to 150
Typical Input Capacitance @ Vds (pF)975@75V
Maximum Drain Source Resistance (mOhm)23@10V
Description
Trans MOSFET N-CH 150V 9.5A
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