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IRL7472L1TRPBF
IRL7472L1TRPBF
MOSFETs IRL7472L1TRPBF
Infineon
IRL7472L1TRPBF
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count15
AutomotiveNo
Lead ShapeNo Lead
PCB changed15
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Hex Drain Octal Source
Package Width9.15(Max)
Package Height0.49(Max)
Package Length7.1(Max)
Product CategoryPower MOSFET
Supplier PackageDirect-FET L8
Maximum IDSS (uA)1
Process TechnologyDirectFET
Typical Fall Time (ns)137
Typical Rise Time (ns)176
Number of Elements per Chip1
Maximum Power Dissipation (mW)3800
Typical Gate Charge @ Vgs (nC)220@4.5V
Maximum Gate Source Voltage (V)±20
Typical Output Capacitance (pF)2436
Typical Turn-On Delay Time (ns)68
Maximum Drain Source Voltage (V)40
Typical Gate Plateau Voltage (V)3
Typical Turn-Off Delay Time (ns)174
Maximum Diode Forward Voltage (V)1.2
Typical Gate to Drain Charge (nC)87
Maximum Gate Threshold Voltage (V)2.5
Minimum Gate Threshold Voltage (V)1
Typical Gate Threshold Voltage (V)1.7
Typical Gate to Source Charge (nC)95
Typical Reverse Recovery Time (ns)57
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)68
Operating Junction Temperature (°C)-55 to 175
Typical Input Capacitance @ Vds (pF)20082@25V
Typical Reverse Recovery Charge (nC)103
Maximum Drain Source Resistance (MOhm)0.45@10V
Maximum Gate Source Leakage Current (nA)100
Maximum Positive Gate Source Voltage (V)20
Maximum Pulsed Drain Current @ TC=25°C (A)1500
Typical Reverse Transfer Capacitance @ Vds (pF)1594@25V
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)40
Description
Trans MOSFET N-CH Si 40V 68A 15-Pin Direct-FET L8 T/R
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