Tab | Tab |
PPAP | No |
EU RoHS | Compliant with Exemption |
Mounting | Through Hole |
ECCN (US) | EAR99 |
Packaging | Tube |
Pin Count | 3 |
Automotive | No |
Lead Shape | Through Hole |
PCB changed | 3 |
Part Status | Active |
Channel Mode | Enhancement |
Channel Type | N |
Configuration | Single |
Package Width | 4.83(Max) |
Package Height | 9.02(Max) |
Package Length | 10.67(Max) |
Product Category | Power MOSFET |
Supplier Package | TO-220AB |
Maximum IDSS (uA) | 1 |
Process Technology | HEXFET |
Standard Package Name | TO-220 |
Typical Fall Time (ns) | 17 |
Typical Rise Time (ns) | 93 |
Typical Switch Charge (nC) | 4.6 |
Number of Elements per Chip | 1 |
Maximum Gate Resistance (Ohm) | 3.8 |
Maximum Power Dissipation (mW) | 65000 |
Typical Gate Charge @ Vgs (nC) | 7.6@4.5V |
Maximum Gate Source Voltage (V) | ±20 |
Typical Output Capacitance (pF) | 360 |
Typical Turn-On Delay Time (ns) | 9.1 |
Maximum Drain Source Voltage (V) | 30 |
Typical Gate Plateau Voltage (V) | 3.9 |
Typical Turn-Off Delay Time (ns) | 9 |
Maximum Diode Forward Voltage (V) | 1 |
Typical Gate to Drain Charge (nC) | 3.4 |
Maximum Gate Threshold Voltage (V) | 2.35 |
Minimum Gate Threshold Voltage (V) | 1.35 |
Typical Gate Threshold Voltage (V) | 1.8 |
Typical Gate to Source Charge (nC) | 1.9 |
Typical Reverse Recovery Time (ns) | 16 |
Maximum Operating Temperature (°C) | 175 |
Minimum Operating Temperature (°C) | -55 |
Maximum Continuous Drain Current (A) | 62 |
Operating Junction Temperature (°C) | -55 to 175 |
Typical Input Capacitance @ Vds (pF) | 1077@15V |
Typical Reverse Recovery Charge (nC) | 14 |
Maximum Drain Source Resistance (mOhm) | 8.7@10V |
Maximum Gate Source Leakage Current (nA) | 100 |
Maximum Positive Gate Source Voltage (V) | 20 |
Maximum Pulsed Drain Current @ TC=25°C (A) | 250 |
Typical Reverse Transfer Capacitance @ Vds (pF) | 110@15V |
Maximum Junction Ambient Thermal Resistance on PCB (°C/W) | 62 |
Description | |