Product Attribute | Attribute Value |
Tab | Tab |
PPAP | No |
EU RoHS | Compliant |
Material | Si |
Mounting | Through Hole |
ECCN (US) | EAR99 |
Pin Count | 3 |
Automotive | No |
PCB changed | 3 |
Part Status | Obsolete |
Channel Mode | Enhancement |
Channel Type | N |
Configuration | Single |
Package Width | 4.8(Max) |
Package Height | 14.9(Max) |
Package Length | 11.1(Max) |
Product Category | Power MOSFET |
Supplier Package | TO-273AA |
Process Technology | HEXFET |
Standard Package Name | TO-273AA |
Typical Fall Time (ns) | 35 |
Typical Rise Time (ns) | 230 |
Number of Elements per Chip | 1 |
Maximum Power Dissipation (mW) | 270000 |
Typical Gate Charge @ Vgs (nC) | 140(Max)@4.5V |
Maximum Gate Source Voltage (V) | ±16 |
Typical Turn-On Delay Time (ns) | 14 |
Maximum Drain Source Voltage (V) | 30 |
Typical Turn-Off Delay Time (ns) | 29 |
Maximum Operating Temperature (°C) | 175 |
Minimum Operating Temperature (°C) | -55 |
Maximum Continuous Drain Current (A) | 179 |
Typical Input Capacitance @ Vds (pF) | 5000@25V |
Maximum Drain Source Resistance (mOhm) | 5@10V |
Description |