Product Attribute | Attribute Value |
HTS | 8541.21.00.75 |
PPAP | No |
EU RoHS | Not Compliant |
Diameter | 9.22(Max) |
Mounting | Through Hole |
ECCN (US) | EAR99 |
Pin Count | 3 |
Automotive | No |
PCB changed | 3 |
Part Status | Active |
Channel Mode | Enhancement |
Channel Type | N |
Configuration | Single |
Package Height | 4.54(Max) |
Product Category | Power MOSFET |
Supplier Package | TO-205AF |
Maximum IDSS (uA) | 250 |
Process Technology | HEXFET |
Typical Fall Time (ns) | 27(Max) |
Typical Rise Time (ns) | 73(Max) |
Number of Elements per Chip | 1 |
Maximum Power Dissipation (mW) | 20000 |
Typical Gate Charge @ Vgs (nC) | 13(Max)@5V |
Maximum Gate Source Voltage (V) | ±10 |
Typical Turn-On Delay Time (ns) | 13(Max) |
Maximum Drain Source Voltage (V) | 100 |
Typical Turn-Off Delay Time (ns) | 41(Max) |
Maximum Gate Threshold Voltage (V) | 2 |
Maximum Operating Temperature (°C) | 150 |
Minimum Operating Temperature (°C) | -55 |
Maximum Continuous Drain Current (A) | 5.3 |
Typical Input Capacitance @ Vds (pF) | 480@25V |
Maximum Drain Source Resistance (mOhm) | 350@5V |
Maximum Gate Source Leakage Current (nA) | 100 |
Description |