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IRLHS2242TR2PBF
IRLHS2242TR2PBF
MOSFETs IRLHS2242TR2PBF
Infineon
IRLHS2242TR2PBF
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count6
AutomotiveNo
Lead ShapeNo Lead
PCB changed6
Part StatusObsolete
Channel ModeEnhancement
Channel TypeP
ConfigurationSingle Quad Drain Dual Source
Package Width2
Package Height0.88
Package Length2
Product CategoryPower MOSFET
Supplier PackagePQFN EP
Maximum IDSS (uA)1
Process TechnologyHEXFET
Standard Package NameQFN
Typical Fall Time (ns)66
Typical Rise Time (ns)54
Typical Switch Charge (nC)4.8
Number of Elements per Chip1
Maximum Power Dissipation (mW)2100
Typical Gate Charge @ 10V (nC)12
Typical Gate Charge @ Vgs (nC)9.6@4.5V|12@10V
Maximum Gate Source Voltage (V)±12
Typical Output Capacitance (pF)273
Typical Turn-On Delay Time (ns)7.9
Maximum Drain Source Voltage (V)20
Typical Gate Plateau Voltage (V)1.99
Typical Turn-Off Delay Time (ns)54
Maximum Diode Forward Voltage (V)1.2
Typical Gate to Drain Charge (nC)3.7
Maximum Gate Threshold Voltage (V)1.1
Minimum Gate Threshold Voltage (V)0.4
Typical Gate Threshold Voltage (V)0.8
Typical Gate to Source Charge (nC)1.6
Typical Reverse Recovery Time (ns)27
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)7.2
Operating Junction Temperature (°C)-55 to 150
Typical Input Capacitance @ Vds (pF)877@10V
Typical Reverse Recovery Charge (nC)20
Maximum Drain Source Resistance (MOhm)31@4.5V
Maximum Gate Source Leakage Current (nA)100
Maximum Positive Gate Source Voltage (V)12
Maximum Pulsed Drain Current @ TC=25°C (A)34
Maximum Power Dissipation on PCB @ TC=25°C (W)9.6
Typical Reverse Transfer Capacitance @ Vds (pF)182@10V
Description
Trans MOSFET P-CH 20V 7.2A 6-Pin PQFN EP T/R
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