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IRLMS6702TRPBF
IRLMS6702TRPBF
MOSFETs IRLMS6702TRPBF
Infineon
IRLMS6702TRPBF
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
PPAPNo
EU RoHSCompliant
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count6
AutomotiveNo
Lead ShapeGull-wing
PCB changed6
Part StatusLTB
Channel ModeEnhancement
Channel TypeP
ConfigurationSingle Quad Drain
Package Width1.75(Max)
Package Height1.3(Max)
Package Length3(Max)
Product CategoryPower MOSFET
Supplier PackageTSOP
Maximum IDSS (uA)1
Process TechnologyHEXFET
Standard Package NameSOP
Typical Fall Time (ns)18
Typical Rise Time (ns)20
Number of Elements per Chip1
Maximum Power Dissipation (mW)1700
Typical Gate Charge @ Vgs (nC)5.8@4.5V
Maximum Gate Source Voltage (V)±12
Typical Output Capacitance (pF)130
Typical Turn-On Delay Time (ns)13
Maximum Drain Source Voltage (V)20
Typical Gate Plateau Voltage (V)2.1
Typical Turn-Off Delay Time (ns)21
Maximum Diode Forward Voltage (V)1.2
Typical Gate to Drain Charge (nC)2.1
Maximum Gate Threshold Voltage (V)0.7(Min)
Minimum Gate Threshold Voltage (V)0.7
Typical Gate to Source Charge (nC)1.8
Typical Reverse Recovery Time (ns)25
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)2.4
Operating Junction Temperature (°C)-55 to 150
Typical Input Capacitance @ Vds (pF)210@15V
Typical Reverse Recovery Charge (nC)15
Maximum Drain Source Resistance (MOhm)200@4.5V
Maximum Gate Source Leakage Current (nA)100
Maximum Positive Gate Source Voltage (V)12
Maximum Pulsed Drain Current @ TC=25°C (A)13
Typical Reverse Transfer Capacitance @ Vds (pF)73@15V
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)75
Description
Trans MOSFET P-CH Si 20V 2.4A 6-Pin TSOP T/R
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