HTS | 8541.29.00.95 |
Tab | Tab |
PPAP | No |
SVHC | Yes |
EU RoHS | Compliant with Exemption |
Material | Si |
Mounting | Surface Mount |
ECCN (US) | EAR99 |
Packaging | Tape and Reel |
Pin Count | 3 |
Automotive | No |
Lead Shape | Gull-wing |
PCB changed | 2 |
Part Status | Active |
Channel Mode | Enhancement |
Channel Type | N |
Configuration | Single |
Package Width | 6.22(Max) |
Package Height | 2.39(Max) |
Package Length | 6.73(Max) |
Product Category | Power MOSFET |
Supplier Package | DPAK |
Maximum IDSS (uA) | 20 |
Process Technology | HEXFET |
Standard Package Name | TO-252 |
SVHC Exceeds Threshold | Yes |
Typical Fall Time (ns) | 55 |
Typical Rise Time (ns) | 95 |
Number of Elements per Chip | 1 |
Maximum Power Dissipation (mW) | 120000 |
Typical Gate Charge @ Vgs (nC) | 22@4.5V |
Maximum Gate Source Voltage (V) | ±16 |
Typical Output Capacitance (pF) | 1920 |
Typical Turn-On Delay Time (ns) | 12 |
Maximum Drain Source Voltage (V) | 80 |
Typical Gate Plateau Voltage (V) | 3.2 |
Typical Turn-Off Delay Time (ns) | 36 |
Maximum Diode Forward Voltage (V) | 1.3 |
Typical Gate to Drain Charge (nC) | 11 |
Maximum Gate Threshold Voltage (V) | 2.5 |
Minimum Gate Threshold Voltage (V) | 1 |
Typical Gate to Source Charge (nC) | 6 |
Typical Reverse Recovery Time (ns) | 75 |
Maximum Operating Temperature (°C) | 175 |
Minimum Operating Temperature (°C) | -55 |
Maximum Continuous Drain Current (A) | 39 |
Operating Junction Temperature (°C) | -55 to 175 |
Typical Input Capacitance @ Vds (pF) | 1890@25V |
Typical Reverse Recovery Charge (nC) | 210 |
Maximum Drain Source Resistance (MOhm) | 28@10V |
Maximum Gate Source Leakage Current (nA) | 200 |
Maximum Positive Gate Source Voltage (V) | 16 |
Maximum Pulsed Drain Current @ TC=25°C (A) | 150 |
Typical Reverse Transfer Capacitance @ Vds (pF) | 35@25V |
Maximum Junction Ambient Thermal Resistance on PCB (°C/W) | 40 |
Description | |