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IPB60R099CSXT
IPB60R099CSXT
MOSFETs IPB60R099CSXT
Infineon
IPB60R099CSXT
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed2
Part StatusUnconfirmed
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width9.25
Package Height4.4
Package Length10
Product CategoryPower MOSFET
Supplier PackageD2PAK
Process TechnologyCoolMOS
Standard Package NameTO-263
SVHC Exceeds ThresholdYes
Number of Elements per Chip1
Maximum Power Dissipation (mW)255000
Typical Gate Charge @ 10V (nC)60
Typical Gate Charge @ Vgs (nC)60@10V
Maximum Gate Source Voltage (V)±20
Maximum Drain Source Voltage (V)600
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)31
Typical Input Capacitance @ Vds (pF)2800@100V
Maximum Drain Source Resistance (MOhm)99@10V
Description
Trans MOSFET N-CH 600V 31A 3-Pin(2+Tab) D2PAK T/R
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