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IRLR3915TR
IRLR3915TR
MOSFETs IRLR3915TR
Infineon
IRLR3915TR
--
Diodes, Transistors and Thyristors
MOSFETs
IRLR3915TR.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPUnknown
EU RoHSNot Compliant
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveYes
Lead ShapeGull-wing
PCB changed2
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width6.22(Max)
Package Height2.39(Max)
Package Length6.73(Max)
Product CategoryPower MOSFET
Supplier PackageDPAK
Process TechnologyHEXFET
Standard Package NameTO-252
Typical Fall Time (ns)100
Typical Rise Time (ns)51
Number of Elements per Chip1
Maximum Power Dissipation (mW)120000
Typical Gate Charge @ 10V (nC)61
Typical Gate Charge @ Vgs (nC)61@10V
Maximum Gate Source Voltage (V)±16
Typical Turn-On Delay Time (ns)7.4
Maximum Drain Source Voltage (V)55
Typical Turn-Off Delay Time (ns)83
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)61
Typical Input Capacitance @ Vds (pF)1870@25V
Maximum Drain Source Resistance (MOhm)14@10V
Description
Trans MOSFET N-CH Si 55V 61A Automotive 3-Pin(2+Tab) DPAK T/R
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