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MOSFETs IRLS3036TRL7PP
Infineon
IRLS3036TRL7PP
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| HTS | 8541.29.00.95 |
| Tab | Tab |
| PPAP | No |
| EU RoHS | Compliant with Exemption |
| Material | Si |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 7 |
| Automotive | No |
| Lead Shape | Gull-wing |
| PCB changed | 6 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single Quint Source |
| Package Width | 9.65(Max) |
| Package Height | 4.83(Max) |
| Package Length | 10.67(Max) |
| Product Category | Power MOSFET |
| Supplier Package | D2PAK |
| Maximum IDSS (uA) | 20 |
| Process Technology | HEXFET |
| Standard Package Name | TO-263 |
| Typical Fall Time (ns) | 170 |
| Typical Rise Time (ns) | 540 |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 380000 |
| Typical Gate Charge @ Vgs (nC) | 110@4.5V |
| Maximum Gate Source Voltage (V) | ±16 |
| Typical Output Capacitance (pF) | 1025 |
| Typical Turn-On Delay Time (ns) | 81 |
| Maximum Drain Source Voltage (V) | 60 |
| Typical Gate Plateau Voltage (V) | 3.9 |
| Typical Turn-Off Delay Time (ns) | 89 |
| Maximum Diode Forward Voltage (V) | 1.3 |
| Typical Gate to Drain Charge (nC) | 53 |
| Maximum Gate Threshold Voltage (V) | 2.5 |
| Minimum Gate Threshold Voltage (V) | 1 |
| Typical Gate to Source Charge (nC) | 33 |
| Typical Reverse Recovery Time (ns) | 57 |
| Maximum Operating Temperature (°C) | 175 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 300 |
| Operating Junction Temperature (°C) | -55 to 175 |
| Typical Input Capacitance @ Vds (pF) | 11270@50V |
| Typical Reverse Recovery Charge (nC) | 140 |
| Maximum Drain Source Resistance (MOhm) | 1.9@10V |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Maximum Positive Gate Source Voltage (V) | 16 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 1000 |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 520@50V |
| Maximum Junction Ambient Thermal Resistance on PCB (°C/W) | 40 |
| Description |
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