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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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ISC011N06LM5ATMA1
ISC011N06LM5ATMA1
MOSFETs ISC011N06LM5ATMA1
Infineon
ISC011N06LM5ATMA1
--
Diodes, Transistors and Thyristors
MOSFETs
ISC011N06LM5ATMA1.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant with Exemption
MountingSurface Mount
PackagingTape and Reel
Pin Count8
AutomotiveNo
Lead ShapeNo Lead
PCB changed8
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Quad Drain Triple Source
Package Width6
Package Height1.1(Max)
Package Length5
Product CategoryPower MOSFET
Supplier PackageTDSON EP
Process TechnologyOptiMOS 5
Typical Fall Time (ns)32
Typical Rise Time (ns)10
Supplier Temperature GradeIndustrial
Number of Elements per Chip1
Maximum Power Dissipation (mW)3000
Typical Gate Charge @ 10V (nC)127
Typical Gate Charge @ Vgs (nC)63@4.5V|127@10V
Maximum Gate Source Voltage (V)20
Typical Turn-On Delay Time (ns)7
Maximum Drain Source Voltage (V)60
Typical Turn-Off Delay Time (ns)78
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)37
Operating Junction Temperature (°C)-55 to 175
Typical Input Capacitance @ Vds (pF)8500@30V
Maximum Drain Source Resistance (MOhm)1.15@10V
Description
Trans MOSFET N-CH 60V 37A 8-Pin TDSON EP T/R
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