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MOSFETs ISC0703NLSATMA1
Infineon
ISC0703NLSATMA1
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| HTS | 8541.29.00.95 |
| PPAP | No |
| EU RoHS | Compliant with Exemption |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Automotive | No |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single Quad Drain Triple Source |
| Product Category | Power MOSFET |
| Maximum IDSS (uA) | 1 |
| Process Technology | OptiMOS 5 |
| Typical Fall Time (ns) | 2.8 |
| Typical Rise Time (ns) | 2 |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 3000 |
| Typical Gate Charge @ 10V (nC) | 17 |
| Typical Gate Charge @ Vgs (nC) | 8.7@4.5V|17@10V |
| Maximum Gate Source Voltage (V) | 20 |
| Typical Turn-On Delay Time (ns) | 3 |
| Maximum Drain Source Voltage (V) | 60 |
| Typical Turn-Off Delay Time (ns) | 9.4 |
| Maximum Gate Threshold Voltage (V) | 2.3 |
| Maximum Operating Temperature (°C) | 175 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 13 |
| Typical Input Capacitance @ Vds (pF) | 1100@30V |
| Maximum Drain Source Resistance (mOhm) | 6.9@10V |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Description |
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