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ISP12DP06NMXTSA1
ISP12DP06NMXTSA1
MOSFETs ISP12DP06NMXTSA1
Infineon
ISP12DP06NMXTSA1
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
ECCN (US)EAR99
PackagingTape and Reel
AutomotiveNo
Part StatusActive
Channel ModeEnhancement
Channel TypeP
ConfigurationSingle Dual Drain
Product CategorySmall Signal
Typical Fall Time (ns)7
Typical Rise Time (ns)9
Number of Elements per Chip1
Maximum Power Dissipation (mW)1800
Typical Gate Charge @ 10V (nC)20.2
Typical Gate Charge @ Vgs (nC)20.2@10V
Maximum Gate Source Voltage (V)20
Typical Turn-On Delay Time (ns)8
Maximum Drain Source Voltage (V)60
Typical Turn-Off Delay Time (ns)23
Maximum Gate Threshold Voltage (V)4
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)2.8
Typical Input Capacitance @ Vds (pF)790@30V
Maximum Drain Source Resistance (mOhm)125@10V
Description
Trans MOSFET P-CH 60V 2.8A T/R
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