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MOSFETs ISS55EP06LMXTSA1
Infineon
ISS55EP06LMXTSA1
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| HTS | 8541.21.00.95 |
| PPAP | No |
| EU RoHS | Compliant |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Automotive | No |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | P |
| Configuration | Single |
| Product Category | Small Signal |
| Typical Fall Time (ns) | 1.2 |
| Typical Rise Time (ns) | 1.4 |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 400 |
| Typical Gate Charge @ 10V (nC) | 0.59 |
| Typical Gate Charge @ Vgs (nC) | 0.59@10V |
| Maximum Gate Source Voltage (V) | 20 |
| Typical Turn-On Delay Time (ns) | 1 |
| Maximum Drain Source Voltage (V) | 60 |
| Typical Turn-Off Delay Time (ns) | 4.9 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 0.16 |
| Typical Input Capacitance @ Vds (pF) | 18@30V |
| Maximum Drain Source Resistance (mOhm) | 5500@10V |
| Description |
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