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JANSH2N7261
JANSH2N7261
MOSFETs JANSH2N7261
Infineon
JANSH2N7261
--
Diodes, Transistors and Thyristors
MOSFETs
JANSH2N7261.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSNot Compliant
Diameter9.22(Max)
MountingThrough Hole
ECCN (US)Contact Export
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Height4.54(Max)
Product CategoryPower MOSFET
Supplier PackageTO-39
Maximum IDSS (uA)25
Process TechnologyHEXFET
Standard Package NameTO-205-AF
Typical Fall Time (ns)40(Max)
Typical Rise Time (ns)32(Max)
Supplier Temperature GradeMilitary
Number of Elements per Chip1
Maximum Power Dissipation (mW)25000
Typical Gate Charge @ Vgs (nC)50(Max)@12V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)25(Max)
Maximum Drain Source Voltage (V)100
Typical Turn-Off Delay Time (ns)40(Max)
Maximum Gate Threshold Voltage (V)4
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)8
Typical Input Capacitance @ Vds (pF)1100@25V
Maximum Drain Source Resistance (mOhm)185@12V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH 100V 8A 3-Pin TO-39
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