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MOSFETs JANTX2N6660
Microchip Technology
JANTX2N6660
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| PPAP | Unknown |
| EU RoHS | Compliant |
| Material | Si |
| ECCN (US) | EAR99 |
| Automotive | Unknown |
| Part Status | Obsolete |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single |
| Product Category | Power MOSFET |
| Maximum IDSS (uA) | 10 |
| Process Technology | DMOS |
| Supplier Temperature Grade | Military |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 6250 |
| Maximum Gate Source Voltage (V) | ±20 |
| Maximum Drain Source Voltage (V) | 60 |
| Maximum Gate Threshold Voltage (V) | 2 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 0.41 |
| Typical Input Capacitance @ Vds (pF) | 50(Max)@24V |
| Maximum Drain Source Resistance (MOhm) | 3000@10V |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Description |
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