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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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LND01K1-G
LND01K1-G
MOSFETs LND01K1-G
Microchip Technology
LND01K1-G
--
Diodes, Transistors and Thyristors
MOSFETs
LND01K1-G.pdf
Specification
Product AttributeAttribute Value
HTS8541.21.00.95
PPAPNo
EU RoHSCompliant
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count5
AutomotiveNo
Lead ShapeGull-wing
PCB changed5
Part StatusActive
Channel ModeDepletion
Channel TypeN
ConfigurationSingle
Package Width1.6
Package Height1.15
Package Length2.9
Supplier PackageSOT-23
Maximum IDSS (uA)300000(Min)
Standard Package NameSOT
Typical Fall Time (ns)6.4
Typical Rise Time (ns)11
Number of Elements per Chip1
Maximum Power Dissipation (mW)360
Maximum Gate Source Voltage (V)0.6
Typical Turn-On Delay Time (ns)3.8
Maximum Drain Source Voltage (V)9
Typical Turn-Off Delay Time (ns)1
Maximum Operating Temperature (°C)125
Maximum Continuous Drain Current (A)0.33
Typical Input Capacitance @ Vds (pF)46@5V
Maximum Drain Source Resistance (MOhm)1400@0V
Description
Trans MOSFET N-CH Si 9V 0.33A 5-Pin SOT-23 T/R
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