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RFD3055SM
RFD3055SM
MOSFETs RFD3055SM
onsemi
RFD3055SM
--
Diodes, Transistors and Thyristors
MOSFETs
RFD3055SM.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
EU RoHSCompliant
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingRail
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed2
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width6.22(Max)
Package Height2.39(Max)
Package Length6.73(Max)
Product CategoryPower MOSFET
Supplier PackageDPAK
Standard Package NameTO-252
Typical Fall Time (ns)10
Typical Rise Time (ns)21
Number of Elements per Chip1
Maximum Power Dissipation (mW)53000
Typical Gate Charge @ Vgs (nC)19@20V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)7
Maximum Drain Source Voltage (V)60
Typical Turn-Off Delay Time (ns)16
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)12
Typical Input Capacitance @ Vds (pF)300@25V
Maximum Drain Source Resistance (mOhm)150@10V
Description
Trans MOSFET N-CH Si 60V 12A 3-Pin(2+Tab) DPAK Rail
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