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LND150N3-G
LND150N3-G
MOSFETs LND150N3-G
Microchip Technology
LND150N3-G
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Diodes, Transistors and Thyristors
MOSFETs
LND150N3-G.pdf
Specification
Product AttributeAttribute Value
HTS8541.21.00.95
PPAPNo
EU RoHSCompliant
MountingThrough Hole
ECCN (US)EAR99
PackagingBag
Pin Count3
AutomotiveNo
PCB changed3
Part StatusActive
Channel ModeDepletion
Channel TypeN
ConfigurationSingle
Package Width4.19(Max)
Package Height5.33(Max)
Package Length5.21(Max)
Product CategoryPower MOSFET
Supplier PackageTO-92
Process TechnologyDMOS
Standard Package NameTO
Typical Fall Time (ns)1300
Typical Rise Time (ns)450
Number of Elements per Chip1
Maximum Power Dissipation (mW)740
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)90
Maximum Drain Source Voltage (V)500
Typical Turn-Off Delay Time (ns)100
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)0.03
Typical Input Capacitance @ Vds (pF)7.5@25V
Maximum Drain Source Resistance (MOhm)1000000@0V
Description
Trans MOSFET N-CH 500V 0.03A 3-Pin TO-92 Bag
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