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MCH6646-TL-E
MCH6646-TL-E
MOSFETs MCH6646-TL-E
onsemi
MCH6646-TL-E
--
Diodes, Transistors and Thyristors
MOSFETs
MCH6646-TL-E.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MaterialSi
ECCN (US)EAR99
PackagingTape and Reel
AutomotiveNo
Part StatusObsolete
Channel ModeDepletion
Channel TypeN
ConfigurationDual
Product CategoryPower MOSFET
Maximum IDSS (uA)1
Typical Fall Time (ns)30
Typical Rise Time (ns)27
Number of Elements per Chip2
Maximum Power Dissipation (mW)800
Typical Gate Charge @ Vgs (nC)1.78@4V
Maximum Gate Source Voltage (V)±10
Typical Turn-On Delay Time (ns)7.5
Maximum Drain Source Voltage (V)20
Typical Turn-Off Delay Time (ns)20
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)2
Typical Input Capacitance @ Vds (pF)115@10V
Maximum Drain Source Resistance (MOhm)160@4V
Maximum Gate Source Leakage Current (nA)10000
Description
Trans MOSFET N-CH Si 20V 2A T/R
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