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MMFT1N10ET1
MMFT1N10ET1
MOSFETs MMFT1N10ET1
onsemi
MMFT1N10ET1
--
Diodes, Transistors and Thyristors
MOSFETs
MMFT1N10ET1.pdf
Specification
Product AttributeAttribute Value
HTS8541.21.00.95
TabTab
PPAPNo
SVHCYes
EU RoHSNot Compliant
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count4
AutomotiveNo
Lead ShapeGull-wing
PCB changed3
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Dual Drain
Package Width3.5
Package Height1.57
Package Length6.5
Product CategoryPower MOSFET
Supplier PackageSOT-223
Standard Package NameSOT
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)32
Typical Rise Time (ns)15
Number of Elements per Chip1
Maximum Power Dissipation (mW)800
Typical Gate Charge @ 10V (nC)7
Typical Gate Charge @ Vgs (nC)7@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)15
Maximum Drain Source Voltage (V)100
Typical Turn-Off Delay Time (ns)30
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-65
Maximum Continuous Drain Current (A)1
Typical Input Capacitance @ Vds (pF)410@20V
Maximum Drain Source Resistance (MOhm)250@10V
Description
Trans MOSFET N-CH Si 100V 1A 4-Pin(3+Tab) SOT-223 T/R
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