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MTB3N100E
MTB3N100E
MOSFETs MTB3N100E
onsemi
MTB3N100E
--
Diodes, Transistors and Thyristors
MOSFETs
MTB3N100E.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
EU RoHSNot Compliant
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingRail
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed2
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width4.83(Max)
Package Height9.65(Max)
Package Length10.29(Max)
Product CategoryPower MOSFET
Supplier PackageD2PAK
Standard Package NameTO-263
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)33
Typical Rise Time (ns)19
Number of Elements per Chip1
Maximum Power Dissipation (mW)2500
Typical Gate Charge @ 10V (nC)32.5
Typical Gate Charge @ Vgs (nC)32.5@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)13
Maximum Drain Source Voltage (V)1000
Typical Turn-Off Delay Time (ns)42
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)3
Typical Input Capacitance @ Vds (pF)1316@25V
Maximum Drain Source Resistance (MOhm)4000@10V
Description
Trans MOSFET N-CH Si 1KV 3A 3-Pin(2+Tab) D2PAK Rail
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