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MOSFETs MTD20P03HDL
onsemi
MTD20P03HDL
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| PPAP | No |
| SVHC | Yes |
| EU RoHS | Not Compliant |
| ECCN (US) | EAR99 |
| Packaging | Rail |
| Automotive | No |
| Part Status | Obsolete |
| Channel Mode | Enhancement |
| Channel Type | P |
| Configuration | Single |
| Product Category | Power MOSFET |
| Maximum IDSS (uA) | 10 |
| Process Technology | HDTMOS |
| SVHC Exceeds Threshold | Yes |
| Typical Fall Time (ns) | 72 |
| Typical Rise Time (ns) | 178 |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 75000 |
| Typical Gate Charge @ Vgs (nC) | 15@5V |
| Maximum Gate Source Voltage (V) | ±15 |
| Typical Output Capacitance (pF) | 360 |
| Typical Turn-On Delay Time (ns) | 18 |
| Maximum Drain Source Voltage (V) | 30 |
| Typical Gate Plateau Voltage (V) | 4.4 |
| Typical Turn-Off Delay Time (ns) | 21 |
| Maximum Diode Forward Voltage (V) | 3.4 |
| Typical Diode Forward Voltage (V) | 3.1 |
| Maximum Gate Threshold Voltage (V) | 2 |
| Minimum Gate Threshold Voltage (V) | 1 |
| Typical Gate Threshold Voltage (V) | 1.5 |
| Typical Reverse Recovery Time (ns) | 78 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 19 |
| Operating Junction Temperature (°C) | -55 to 150 |
| Typical Input Capacitance @ Vds (pF) | 770@25V |
| Typical Reverse Recovery Charge (nC) | 209 |
| Maximum Drain Source Resistance (MOhm) | 99@5V |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Maximum Positive Gate Source Voltage (V) | 15 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 57 |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 130@25V |
| Description |
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