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MTP3055V
MTP3055V
MOSFETs MTP3055V
onsemi
MTP3055V
--
Diodes, Transistors and Thyristors
MOSFETs
MTP3055V.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
EU RoHSNot Compliant
MountingThrough Hole
ECCN (US)EAR99
PackagingRail
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width4.82(Max)
Package Height9.28(Max)
Package Length10.28(Max)
Product CategoryPower MOSFET
Supplier PackageTO-220AB
Maximum IDSS (uA)10
Standard Package NameTO-220
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)18
Typical Rise Time (ns)34
Number of Elements per Chip1
Maximum Power Dissipation (mW)48000
Typical Gate Charge @ 10V (nC)12.2
Typical Gate Charge @ Vgs (nC)12.2@10V
Maximum Gate Source Voltage (V)±20
Typical Output Capacitance (pF)130
Typical Turn-On Delay Time (ns)7
Maximum Drain Source Voltage (V)60
Typical Gate Plateau Voltage (V)6.8
Typical Turn-Off Delay Time (ns)17
Maximum Diode Forward Voltage (V)1.6
Typical Diode Forward Voltage (V)1
Maximum Gate Threshold Voltage (V)4
Minimum Gate Threshold Voltage (V)2
Typical Gate Threshold Voltage (V)2.7
Typical Reverse Recovery Time (ns)56
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)12
Operating Junction Temperature (°C)-55 to 175
Typical Input Capacitance @ Vds (pF)410@25V
Typical Reverse Recovery Charge (nC)128
Maximum Drain Source Resistance (mOhm)150@10V
Maximum Gate Source Leakage Current (nA)100
Maximum Positive Gate Source Voltage (V)20
Maximum Pulsed Drain Current @ TC=25°C (A)37
Typical Reverse Transfer Capacitance @ Vds (pF)25@25V
Description
Trans MOSFET N-CH 60V 12A 3-Pin(3+Tab) TO-220AB Rail
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